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Numerical simulation and modeling of III-V multi-junction solar cells

: Philipps, S.P.; Hermle, M.; Letay, G.; Guter, W.; George, B.M.; Dimroth, F.; Bett, A.W.

Fulltext urn:nbn:de:0011-n-2097668 (153 KByte PDF)
MD5 Fingerprint: 62d8e10bac7116f63e86da013b36574b
Created on: 6.9.2012

Lincot, D. ; European Commission, Joint Research Centre -JRC-:
The compiled state-of-the-art of PV solar technology and deployment. 23rd European Photovoltaic Solar Energy Conference, EU PVSEC 2008. Proceedings. CD-ROM : Held in Valencia, Spain, 1 - 5 September 2008; Proceedings of the international conference
München: WIP-Renewable Energies, 2008
ISBN: 3-936338-24-8
ISBN: 978-3-936338-24-9
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <23, 2008, Valencia>
Conference Paper, Electronic Publication
Fraunhofer ISE ()

This paper presents results of numerical simulations of a III-V dual-junction solar cell including tunnel diode and Bragg reflector. The simulations are carried out in a commercially available semiconductor simulation environment. For the computation of the quantum efficiency of the subcells a special procedure using biasillumination and bias-voltage is implemented. The model is validated by a comparison of simulated external quantum efficiency (EQE) and IV curve with experimental data. A very good agreement is achieved. Simulations are used to illustrate the influence of the Bragg reflector and the tunnel diode on the EQE. Additionally, the capabilities of the model for design optimization are exemplified by an adaption of the subcells' thicknesses.