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Advanced RTP-process for boron-doped and oxygen contaminated Cz silicon

: Lee, J.Y.; Peters, S.; Dicker, J.; Rein, S.; Glunz, S.W.

McNelis, B. ; WIP - Renewable Energies, München:
17th European Photovoltaic Solar Energy Conference 2001. Vol.2 : Proceedings of the international conference held in Munich, Germany, 22 - 26, October 2001
München: WIP-Renewable Energies, 2002
ISBN: 3-936338-07-8
ISBN: 88-900442-3-3
European Photovoltaic Solar Energy Conference <17, 2001, München>
Conference Paper
Fraunhofer ISE ()

An improvement of the stable carrier lifetime was achieved by Rapid Thermal Processing (RTP). On three different Cz materials and a FZ material the influence of the plateau temperature on the stable lifetime was investigated. At plateau temperatures below 900 °C, the carrier lifetime can be improved using an optimized process whereas at temperatures above 900 °C, the carrier lifetime is decreased not only for all Cz materials but also for FZ materials. Interestingly, in two subsequent high-temperature steps the last step determines the stable carrier lifetime and the degraded stable lifetime due to a first step can be reversed by an optimized second step. The effect of such process sequences on the standard RTP-solar cell has been analyzed.