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Accurate determination of bulk lifetime and surface recombination velocity by a comprehensive thinning experiment

: Kampwerth, H.; Rein, S.; Glunz, S.

Fulltext urn:nbn:de:0011-n-2096642 (1.0 MByte PDF)
MD5 Fingerprint: 3823c3689ea394e124797d4d23840d93
Created on: 13.10.2012

Hoffmann, W.:
Nineteenth European Photovoltaic Solar Energy Conference 2004. Vol.1 : Proceedings of the international conference held in Paris, France, 7 - 11 June 2004
München: WIP, 2004
ISBN: 3-936338-14-0
ISBN: 88-89407-02-6
European Photovoltaic Solar Energy Conference <19, 2004, Paris>
Conference Paper, Electronic Publication
Fraunhofer ISE ()

This paper will present the accurate determination of the bulk lifetime Ï b of the minority charge carriers, as well the surface recombination velocities S of SiO2 and SiNx passivated surfaces on differently p-type doped silicon. The data determined in this work are in good agreement with Yablonovitch's [1] data for lifetime and will even give an enhancement to higher injection levels. In addition to this the three major Auger-limited models describing the Auger lifetime have been compared by using our measured data. Finally a correction factor is introduced for the classical three particle Auger recombination at high carrier densities.