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High-throughput continuous CVD reactor for silicon deposition

: Hurrle, A.; Reber, S.; Schillinger, N.; Haase, J.; Reichart, J.G.

Fulltext urn:nbn:de:0011-n-2096419 (273 KByte PDF)
MD5 Fingerprint: c8238332a6388a3f55b9f092776b6293
Created on: 25.10.2012

Hoffmann, W.:
Nineteenth European Photovoltaic Solar Energy Conference 2004. Vol.1 : Proceedings of the international conference held in Paris, France, 7 - 11 June 2004
München: WIP, 2004
ISBN: 3-936338-14-0
ISBN: 88-89407-02-6
European Photovoltaic Solar Energy Conference <19, 2004, Paris>
Conference Paper, Electronic Publication
Fraunhofer ISE ()

A prototype of a high-throughput APCVD reactor for silicon deposition has been designed and built where two parallel rows of substrates are continuously fed in and out through gas curtains. Such a reactor can fulfil the hard economic requirements for the production of crystalline silicon thin-film solar cells. Special attention has been directed to a save and reliable operation of the gas curtain system. First deposition experiments on mc-Si substrates revealed epitaxial layers of high crystal quality and homogeneity, deposition rates >3 µm/min and a conversion efficiency Si (gas) -> Si (solid) up to 30%.