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Thermal stability of PECVD a-Si:H single and PECVD a-Si:H + PECVD a-SiOx:H double layers for silicon solar cell rear side passivation

: Hofmann, M.; Schmidt, C.; Raabe, B.; Rentsch, J.; Preu, R.

Fulltext urn:nbn:de:0011-n-2096302 (420 KByte PDF)
MD5 Fingerprint: b48796640d3c85f9fdbdaefc222c3833
Created on: 31.8.2012

Ray, S. ; Indian Association for the Cultivation of Science -IACS-:
18th International Photovoltaic Science and Engineering Conference & Exhibition 2009. Technical digest : 19 - 23 January, 2009, Science City Convention Center, Kolkata, India
New Delhi: Macmillan, 2009 (Macmillan advanced research series)
ISBN: 0-230-63743-4
ISBN: 978-0-230-63743-6
International Photovoltaic Science and Engineering Conference & Exhibition (PVSEC) <18, 2009, Kolkata/India>
Conference Paper, Electronic Publication
Fraunhofer ISE ()

Hydrogenated amorphous silicon layers have been proven to potentially provide excellent passivation for crystalline silicon surfaces but typically show a sensitivity of the passivation effect to the thermal treatment of the samples after the deposition. This paper discusses the impact of different thermal processes in the range of 400°C to 850°C and of 3 s to 120 min on the passivation properties and on the hydrogen content of samples passivated with single a-Si:H and double a-Si:H + a-SiOx:H layers. Furthermore, the hydrogen depth profile after deposition and thermal treatment at 400°C and 550°C was investigated by nuclear reaction analysis showing a hydrogen accumulation at the a-Si/c-Si interface for the high temperature. This is accompanied by a bubble formation at the interface at 700°C. Rehydrogenation of a-Si:H layers is performed and characterised by carrier lifetime and Si-H bond density analysis.