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Lifetime and material characteristics of multicrystalline silicon measured with high spatial resolution

 
: Glunz, S.W.; Hebling, C.; Warta, W.

Pizzini, S.:
Polycrystalline semiconductors IV. Physics chemistry and technology : Proceedings of the Fourth International Conference, Gargnano, Italy, September 9 - 14, 1995
Aedermannsdorf: Scitec Publications, 1996 (Diffusion and defect data. B, Solid state phenomena 51/52)
ISBN: 3-908450-19-5
ISSN: 1012-0394
pp.69-74
International Conference on Polycrystalline Semiconductors - Physics, Chemistry and Technology (POLYSE) <4, 1995, Gargnano>
English
Conference Paper
Fraunhofer ISE ()

Abstract
Modulated free-carrier absorption is used as a new lifetime mapping technique. Differences to other techniques are explained and examples for lifetime maps are given. The method is used to compare lifetime maps with other material characteristics, as crystal structure and interstitial oxygen concentration. For this investigation highly resolved O/sub i/ maps have been measured with a fourier-transform spectrometer, extended with an infrared microscope. The evolution of the interstitial oxygen concentration after different heat treatments was measured using the fourier- transform spectrometer and compared with the minority carrier lifetime, in order to investigate the electrical activity of interstitial and precipitated oxygen.

: http://publica.fraunhofer.de/documents/N-209541.html