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Simulation of phase changes and dopant diffusion in silicon for the manufacturing of selective phosphorous emitters via laser chemical processing

 
: Fell, A.; Kray, D.; Wütherich, T.; Müller, R.; Willeke, G.P.; Glunz, S.W.

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Fulltext urn:nbn:de:0011-n-2095236 (310 KByte PDF)
MD5 Fingerprint: 3079c0e2fe5b490a05043d8d7023ef92
Created on: 6.9.2012


Lincot, D. ; European Commission, Joint Research Centre -JRC-:
The compiled state-of-the-art of PV solar technology and deployment. 23rd European Photovoltaic Solar Energy Conference, EU PVSEC 2008. Proceedings. CD-ROM : Held in Valencia, Spain, 1 - 5 September 2008; Proceedings of the international conference
München: WIP-Renewable Energies, 2008
ISBN: 3-936338-24-8
ISBN: 978-3-936338-24-9
pp.272-274
English
Conference Paper, Electronic Publication
Fraunhofer ISE ()

Abstract
In this paper we report progress in the simulation of Laser Chemical Processing (LCP) with respect to the selective emitter forming. Our existing Matlab® code for simulation of laser heating, melting and evaporation has been enhanced to take into account evaporation by nanosecond pulses, dopant diffusion in silicon melt and the influence of the increased ambient pressure, caused by the high velocity liquid jet impinging on the surface. The new models have been uccessfully tested and compared with dry laser doping experiments. For the LCP case we achieved good agreement between simulation and experiment only for laser pulses in the nanosecond regime, because only for these process parameters hydrodynamic effects caused by the liquid jet can be neglected. From these results we can conclude that the best solar cell performance with LCP doping is achieved if the dominant dopant transport mechanism is liquid phase diffusion.

: http://publica.fraunhofer.de/documents/N-209523.html