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High throughput laser isolation of crystalline silicon solar cells

: Emanuel, G.; Schneiderlöchner, E.; Stollhof, J.; Gentischer, J.; Preu, R.; Lüdemann, R.

Fulltext urn:nbn:de:0011-n-2095196 (754 KByte PDF)
MD5 Fingerprint: 0f9eba80b1479b69d0b222161bac09b0
Created on: 27.10.2012

McNelis, B. ; WIP - Renewable Energies, München:
17th European Photovoltaic Solar Energy Conference 2001. Vol.2 : Proceedings of the international conference held in Munich, Germany, 22 - 26, October 2001
München: WIP-Renewable Energies, 2002
ISBN: 3-936338-07-8
ISBN: 88-900442-3-3
European Photovoltaic Solar Energy Conference <17, 2001, München>
Conference Paper, Electronic Publication
Fraunhofer ISE ()

The application of laser technology processing for edge isolation of crystalline-silicon cells is investigated. Two Nd:YAG lasers and a Nd:YVO4 laser operating at 1064 nm or frequency doubled at 532 nm and with different powers are used. The performance of the laser processed solar cells is characterized by measurements of the illuminated IV-curves. Dark IV-curve measurements are accomplished to determine the shunt resistance. It is shown that sufficiently high values of the shunt resistance are achievable. A significant dependency between the fill factor of the cells and the average laser power respectively the point to point overlap, is found. The solar cells used for laser isolation have been processed in an industrial cell fabrication line, and show efficiencies up to 13.2% and fill factors around 77%.