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Physical mechanisms of breakdown in multicrystalline silicon solar cells

 
: Breitenstein, O.; Bauer, J.; Wagner, J.-M.; Blumtritt, H.; Lotnyk, A.; Kasemann, M.; Kwapil, W.; Warta, W.

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Postprint urn:nbn:de:0011-n-2094876 (787 KByte PDF)
MD5 Fingerprint: f9b9915cb948e17a0d733a990baa79a5
© 2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Created on: 31.8.2012


Institute of Electrical and Electronics Engineers -IEEE-; IEEE Electron Devices Society:
34th IEEE Photovoltaic Specialists Conference, PVSC 2009. Vol.3 : Philadelphia, Pennsylvania, USA, 7 - 12 June 2009
Piscataway/NJ: IEEE, 2009
ISBN: 978-1-4244-2949-3
ISBN: 1-4244-2949-8
ISBN: 978-1-4244-2950-9
pp.1866-1871
Photovoltaic Specialists Conference (PVSC) <34, 2009, Philadelphia/Pa.>
English
Conference Paper, Electronic Publication
Fraunhofer ISE ()

Abstract
We have identified at least five different local breakdown mechanisms according to the temperature coefficient (TC) and slope of their characteristics and electroluminescence (EL) under reverse bias. These are (1) early prebreakdown (strongly negative TC, low slope), (2) edge breakdown (positive TC, low slope, no EL), (3) weak defect-induced breakdown (zero or weakly negative TC, moderate slope, 1550 nm defect luminescence), (4) strong defect-induced breakdown (zero or weakly negative TC, moderate slope, no or weak defect luminescence), and (5) avalanche breakdown at dislocation-induced etch pits (negative TC, high slope). The latter mechanism usually dominates at high reverse bias. In addition to the local breakdown sites there is evidence of an areal reverse current between the dominant breakdown sites showing a positive TC. Since defect-induced breakdown shows a zero or weakly negative TC and also leads to weak avalanche multiplication, we propose defect level-induced avalanche instead of trap-assisted tunneling to be responsible for this breakdown mechanism.

: http://publica.fraunhofer.de/documents/N-209487.html