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Polysilicon tunnel junctions as alternates to diffused junctions

 
: Borden, P.; Xu, L.; McDougall, B.; Chang, C.P.; Pysch, D.; Voisin, P.; Glunz, S.W.

:
Fulltext urn:nbn:de:0011-n-2094855 (543 KByte PDF)
MD5 Fingerprint: 9b4577bc79de76eb409d4045a8fa8f8a
Created on: 6.9.2012


Lincot, D. ; European Commission, Joint Research Centre -JRC-:
The compiled state-of-the-art of PV solar technology and deployment. 23rd European Photovoltaic Solar Energy Conference, EU PVSEC 2008. Proceedings. CD-ROM : Held in Valencia, Spain, 1 - 5 September 2008; Proceedings of the international conference
München: WIP-Renewable Energies, 2008
ISBN: 3-936338-24-8
ISBN: 978-3-936338-24-9
pp.1149-1152
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <23, 2008, Valencia>
English
Conference Paper, Electronic Publication
Fraunhofer ISE ()

Abstract
We report use of heavily doped polysilicon combined with a tunnel dielectric to provide an alternate to diffused junctions for silicon solar cells. Thin tunnel dielectrics (6-12Ã ) are fabricated using methods adapted from IC processing. These serve as diffusion barriers and passivation layers. When combined with heavily doped polysilicon, they can form an ideal step junction with interface passivation, enabling low dark currents not possible with diffused emitters. We show that it is possible to obtain hyper-abrupt junctions with the tunnel layer providing interface passivation, and that these junctions obtain a VOC of 676 mV on 780 µm thick substrates.

: http://publica.fraunhofer.de/documents/N-209485.html