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Gettering efficiency of backside aluminium layer and Al-Si-Eutectic

 
: Blazek, M.; Kwapil, W.; Schön, J.; Warta, W.

:
Fulltext urn:nbn:de:0011-n-2094822 (366 KByte PDF)
MD5 Fingerprint: 677109533f5f10670261b82df32cb04b
Created on: 1.9.2012


Lincot, D. ; European Commission, Joint Research Centre -JRC-:
The compiled state-of-the-art of PV solar technology and deployment. 23rd European Photovoltaic Solar Energy Conference, EU PVSEC 2008. Proceedings. CD-ROM : Held in Valencia, Spain, 1 - 5 September 2008; Proceedings of the international conference
München: WIP-Renewable Energies, 2008
ISBN: 3-936338-24-8
ISBN: 978-3-936338-24-9
pp.1637-1643
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <23, 2008, Valencia>
English
Conference Paper, Electronic Publication
Fraunhofer ISE ()

Abstract
Simulations of gettering processes are presented, modelling the gettering effect of Aluminium layers on silicon wafers. Focus is set on the influence of different physical parameters like segregation coefficient, Al layer thickness and structure, and impurity concentration on the Al getter mechanism. This work is the first step towards the optimization of the gettering process of wafers made of alternative feedstock material. The simulations of gettering processes are carried out applying the Sentaurus Process simulator (Synopsis®).

: http://publica.fraunhofer.de/documents/N-209482.html