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Emitter profile tailoring by gas flux variation in tube furnace PoCl3-diffusion and analysis of the phosphosilicate glass

 
: Bertram, C.; Wolf, A.; Belledin, U.; Wotke, E.A.; Biro, D.

:
Fulltext urn:nbn:de:0011-n-2094729 (187 KByte PDF)
MD5 Fingerprint: c1843a8bb48d6d62f6f955adb3e3d5d3
Created on: 15.8.2012


Sinke, W. ; WIP - Renewable Energies, München; European Commission; UNESCO; World Council for Renewable Energy; International Photovoltaic Equipment Association:
24th European Photovoltaic Solar Energy Conference 2009. CD-ROM : The compiled State-of-the-Art of PV Solar Technology and Deployment. Proceedings of the International Conference held in Hamburg, 21-25 September 2009
München, 2009
ISBN: 3-936338-25-6
pp.1863-1867
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <24, 2009, Hamburg>
English
Conference Paper, Electronic Publication
Fraunhofer ISE ()

Abstract
We analyze possibilities and difficulties of forming POCl3-diffused emitters for industrial application with low recombination by reducing the maximum phosphorus concentration in the emitter. For this purpose we vary the concentration of reactants in the process tube furnace. Both life time samples and solar cells are processed with reference emitters and emitters of the proposed variation. During processing we take special care of a detailed characterisation of the phosphosilicate glass and assess its basic properties. We observe a gain in cell efficiency of 0.2% absolute on standard screen-printed silicon solar cells fabricated with the improved emitters. Diffusions with low concentration of reactants provide higher open circuit voltages and efficiencies. The fill factor level is maintained, since the contact resistance does not increase although the peak doping reduces from ~8 to ~5x1020cm-3. A correlation between peak doping and saturation current is observed. Increasing deposition time in expense of drive-in time allows mitigating the negative impact on sheet resistance homogeneity and homogeneity along the processing boat (suitable for 200 Wafers).

: http://publica.fraunhofer.de/documents/N-209472.html