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Passivation of boron emitters by local overcompensation with phosphorus

 
: Benick, J.; Schultz-Wittmann, O.; Schön, J.; Glunz, S.W.

:
Fulltext urn:nbn:de:0011-n-2094681 (235 KByte PDF)
MD5 Fingerprint: f0a514df2642655c8c7c97519d02d85a
Created on: 6.9.2012


Lincot, D. ; European Commission, Joint Research Centre -JRC-:
The compiled state-of-the-art of PV solar technology and deployment. 23rd European Photovoltaic Solar Energy Conference, EU PVSEC 2008. Proceedings. CD-ROM : Held in Valencia, Spain, 1 - 5 September 2008; Proceedings of the international conference
München: WIP-Renewable Energies, 2008
ISBN: 3-936338-24-8
ISBN: 978-3-936338-24-9
pp.1550-1552
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <23, 2008, Valencia>
English
Conference Paper, Electronic Publication
Fraunhofer ISE ()

Abstract
A novel approach for the passivation of boron emitters is presented. As it is more difficult to achieve low surface recombination velocities on highly doped p-type silicon (e.g. boron emitter) than on highly doped n-type silicon (e.g. phosphorus emitter) our approach is to locally overcompensate the surface of the boron emitter by a shallow phosphorus diffusion. This inversion of the surface doping from p-type to n-type allows the use of standard technologies which are used for passivation of highly doped n-type surfaces. A low emitter saturation current density (J0e) of 49 fA/cm2 on SiO2 passivated lifetime samples has been reached. On solar cells we achieved with this this n- EPF (Emitter Passivated by a Floating junction) cell structure a confirmed conversion efficiency of 21.7 % and an open-circuit voltage (Voc) of 676 mV.

: http://publica.fraunhofer.de/documents/N-209468.html