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Modification of second harmonic generation in silicon by strain and structuring

: Schriever, C.; Bohley, C.; Naumann, F.; Boor, J. de; Lange, J.; Schilling, J.


8th IEEE International Conference on Group IV Photonics (GFP), 2011 : 14-16 Sept. 2011
Piscataway: IEEE, 2011
ISBN: 978-1-4244-8338-9
International Conference on Group IV Photonics (GFP) <8, 2011, London>
Conference Paper
Fraunhofer IWM ( IMWS) ()

The influence of strain and lateral structuring on the reflected second harmonic signal in silicon is investigated. The obtained second-harmonic enhancement could be used in silicon waveguides to create a localized second order nonlinear susceptibility.