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Local stress measurement on metal lines and dielectrics of BEoL pattern by stress relief technique

: Vogel, D.; Rzepka, S.; Michel, B.; Gollhardt, A.


Institute of Electrical and Electronics Engineers -IEEE-:
SCD 2011, IEEE Semiconductor Conference Dresden. Technology, Design, Packaging, Simulation and Test. CD-ROM : 27-28 Sept. 2011, Dresden, International Conference, Workshop and Table-top Exhibition
New York, NY: IEEE, 2011
ISBN: 978-1-4577-0431-4
ISBN: 978-1-4577-0430-7
ISBN: 978-1-4577-0429-1
Art. 6068737
Semiconductor Conference <2011, Dresden>
Conference Paper
Fraunhofer ENAS ()
Fraunhofer IZM ()

The paper presents a new measurement method for residual stresses introduced by manufacturing in BEoL structures. Material removal by FIB ion milling is used to release elastically frozen stresses. Normal stress components are calculated from local stress relaxation nearby milled trenches. A validation of the new technique is accomplished by additional bow measurements on defined layers on substrate. Spatially resolved determination of stress values in metal lines and the dielectrics in between demonstrates the capability of the tool for future applications.