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20 nm metamorphic HEMT with 660 GHz f T

: Leuther, A.; Koch, S.; Tessmann, A.; Kallfass, I.; Merkle, T.; Massler, H.; Loesch, R.; Schlechtweg, M.; Saito, S.; Ambacher, O.

Institute of Electrical and Electronics Engineers -IEEE-:
Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011 : 22-26 May 2011, Berlin
New York, NY: IEEE, 2011
ISBN: 978-1-4577-1753-6
Art. 5978292
International Conference on Indium Phosphide and Related Materials (IPRM) <23, 2011, Berlin>
Conference Paper
Fraunhofer IAF ()

A metamorphic HEMT MMIC technology with 20 nm gate length is presented, developed for the fabrication of terahertz-wave monolithic integrated circuits (TMICs) with operational frequencies beyond 500 GHz. The MBE grown transistor heterostructure comprises a strained In 0.8Ga 0.2As channel with high electron mobility and high electron density for proper device scaling. The realized mHEMTs achieve a source resistance RS of 0.1 mm which is required to minimize resistive losses in combination with an extrinsic maximum transconductance g m-max of 2500 mS/mm. The output characteristics of the 20 nm devices show no short channel effects and demonstrate sufficient pinch-off behavior for analog applications. For a transistor with 2 × 10 m gate width a cut-off frequency f T of 660 GHz was extrapolated which is to our knowledge the highest published f T for any HEMT device. The presented 20 nm mHEMT technology was employed for the design of a compact four stage lownoise amplifier (LNA). The total small signal gain of the LNA exceeds 20 dB from 115 - 175 GHz.