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Formation of InAs/InGaAsP quantum dashes

: Lenz, A.; Eisele, H.; Genz, F.; Ivanova, L.; Timm, R.; Franke, D.; Künzel, H.; Pohl, U.W.; Dähne, M.


Ihm, J.; Cheong, H.:
Physics of Semiconductors: 30th International Conference on the Physics of Semiconductors 2010 : Seoul, Korea, 25-30 July 2010
Woodbury, NY: AIP Press, 2012 (AIP Conference Proceedings 1399)
ISBN: 978-0-7354-1002-2
ISBN: 0-7354-1002-X
ISSN: 0094-243X
International Conference on the Physics of Semiconductors (ICPS) <30, 2010, Seoul>
Conference Paper
Fraunhofer HHI ()

Self-assembled InAs/InGaAsP/InP(001) nanostructures are investigated using cross-sectional scanning tunneling microscopy. Atomically resolved images show elongated nanostructures with binary composition and a truncated pyramidal shape. The investigation of the InGaAsP/InP interface shows a tendency of the quaternary matrix material towards decomposition and indicates InAs quantum-dash formation by nucleation on initially slightly decomposed InAs-rich regions of the InGaAsP.