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Self-heating effects in nano-scaled MOSFETs and thermal aware compact models

: Burenkov, A.; Lorenz, J.

Courtois, Bernard (General Chair) ; Institute of Electrical and Electronics Engineers -IEEE-:
17th International Workshop on Thermal investigations of ICs and Systems, THERMINIC 2011 : 27-29 September 2011, Paris, France
Grenoble: EDA Publishing, 2011
ISBN: 978-2-35500-018-8
International Workshop on Thermal investigations of ICs and Systems (THERMINIC) <17, 2011, Paris>
Conference Paper
Fraunhofer IISB ()

Self-heating of MOSFETs scaled according to ITRS specifications for the years 2010 to 2019 is investigated using numerical TCAD simulations. The local warming-up due to self-heating in SOI based transistors can exceed 100 K and must be considered in IC design. For this purpose, compact models (BSIM3SOI and BSIM4SOI) accounting for self-heating effect were extracted for SOI-MOSFETs from the results of numerical TCAD simulations.