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Implantation-induced structural defects in highly activated USJs: Boron precipitation and trapping in pre-amorphised silicon

Implantationsinduzierte strukturelle Defekte in hoch aktivierten ultraflachen pn-Übergängen: Präzipitation und Trapping von Bor in voramorphisiertem Silicium
: Cristiano, F.; Essa, Z.; Qiu, Y.; Spiegel, Y.; Torregrosa, F.; Duchaine, J.; Boulenc, P.; Tavernier, C.; Cojocaru, O.; Blavette, D.; Mangelinck, D.; Fazzini, P.F.; Quillec, M.; Bazizi, M.; Hackenberg, M.; Boninelli, S.


Institute of Electrical and Electronics Engineers -IEEE-:
12th International Workshop on Junction Technology, IWJT 2012 : 14-15 May 2012, Shanghai
New York, NY: IEEE, 2012
ISBN: 978-1-4673-1257-8
ISBN: 978-1-4673-1256-1
ISBN: 978-1-4673-1258-5
International Workshop on Junction Technology (IWJT) <12, 2012, Shanghai>
Conference Paper
Fraunhofer IISB ()
boron; silicon; precipitation; trapping; formation

Today, most of the state-of-the-art USJs fabrication processes involve the formation of an amorphous surface layer before or during the dopant implant step. In this paper, we present a review of some recent experimental studies on the Boron precipitation and trapping in pre-amorphised USJs. These studies suggest that the physical mechanism governing the Boron trapping mainly depends on the Boron concentration left below the a/c interface after the implant. Tn addition to providing a contribution to the understanding of the Boron trapping phenomenon, these results clearly indicate that physical models for the formation of large Boron precipitates need to be implemented in TCAD simulators for a comprehensive description of the USJ fabrication process.