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Nano-analytical and electrical characterization of 4H-SiC MOSFETs

 
: Beltran, A.M.; Schamm-Chardon, S.; Mortet, V.; Lefebvre, M.; Bedel-Pereira, E.; Cristiano, F.; Strenger, C.; Häublein, V.; Bauer, A.J.

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Alquier, D.:
HeteroSiC & WASMPE 2011 : Selected, peer reviewed papers from the 4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications, June 27-30, 2011, Tours
Dürnten: Trans Tech Publications, 2012 (Materials Science Forum 711)
ISBN: 978-3-03-785332-0
pp.134-138
Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications <4, 2011, Tours>
English
Conference Paper
Fraunhofer IISB ()

Abstract
4H-SiC presents great advantages for its use in power electronic devices working at particular conditions. However the development of MOSFETs based on this material is limited by mobility degradation. N-channel SiC MOSFETs were manufactured on p-type epitaxial and p-implanted substrates and the electron mobility in the inversion channels was measured to be correlated with their structural and chemical properties determined by transmission electron microscopy methods. With regard to what was previously discussed in the literature, transition layer formation and carbon distribution across the SiC-SiO 2 interface are considered in relation with the measured low electron mobility of the MOSFETS.

: http://publica.fraunhofer.de/documents/N-206902.html