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RF-MEMS switch module in a 0.25 µm BiCMOS technology

 
: Kaynak, M.; Wietstruck, M.; Zhang, W.; Drews, J.; Scholz, R.; Knoll, D.; Korndörfer, F.; Wipf, C.; Schulz, K.; Elkhouly, M.; Kaletta, K.; Suchodoletz, M.V.; Zoschke, K.; Wilke, M.; Ehrmann, O.; Mühlhaus, V.; Liu, G.; Purtova, T.; Ulusoy, A.C.; Schumacher, H.; Tillack, B.

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Institute of Electrical and Electronics Engineers -IEEE-:
IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2012. Digest of Papers : 16-18 Jan. 2012, Santa Clara, Calif.
New York, NY: IEEE, 2012
ISBN: 978-1-4577-1316-3
ISBN: 978-1-4577-1318-7
ISBN: 978-1-4577-1317-0 (Print)
pp.25-28
Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) <12, 2012, Santa Clara/Calif.>
English
Conference Paper
Fraunhofer IZM ()

Abstract
A BiCMOS embedded RF-MEMS switch module is demonstrated. The module consists of four main blocks: 1) RF-MEMS switch technology, 2) Switch models for design-kit implementation, 3) High Voltage (HV) generation and digital interface, 4) Flexible packaging. The RF-MEMS switch technology is detailed by focusing on the contact model, especially in the down-state. Electromagnetic (EM) and lumped-element models are demonstrated to integrate into foundry process design kit (PDK). The integrated on-chip HV generation and control circuitries are described. A flexible packaging technique is also introduced to package either standalone switches or circuits with several switches.

: http://publica.fraunhofer.de/documents/N-206762.html