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Silicon-CMOS compatible in-situ CCVD grown graphene transistors with ultra-high on/off-current ratio

 
: Wessely, P.J.; Wessely, F.; Birinci, E.; Beckmann, K.; Riedinger, B.; Schwalke, U.

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Postprint urn:nbn:de:0011-n-2067291 (683 KByte PDF)
MD5 Fingerprint: bacb8e0e672594aa05f93e9bf54160f4
Created on: 23.4.2013


Physica. E 44 (2012), No.7-8, pp.1132-1135
ISSN: 1386-9477
Deutsche Forschungsgemeinschaft DFG
SCHW1173/7-1
European Commission EC
ESF-EuroGRAPHENE; ELOGRAPH
English
Journal Article, Electronic Publication
Fraunhofer IWM ()
graphene transistors; CCVD; bilayer graphene

Abstract
By means of catalytic chemical vapor deposition (CCVD) in-situ grown monolayer graphene field-effect transistors (MoLGFETs) and bilayer graphene transistors (BiLGFETs) are realized directly on oxidized silicon substrate without the need to transfer graphene layers. In-situ grown MoLGFETs exhibit the expected Dirac point together with the typical low on/off-current ratios. In contrast, BiLGFETs possess unipolar p-type device characteristics with an extremely high on/off-current ratio up to 1×10 7. The complete fabrication process is silicon CMOS compatible. This will allow a simple and low-cost integration of graphene devices for nanoelectronic applications in a hybrid silicon CMOS environment.

: http://publica.fraunhofer.de/documents/N-206729.html