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Ozone based chemical oxide growth for crystalline solar cell production

: Wolke, K.; Gottschalk, C.; Rentsch, J.; Angermann, H.


Mertens, P. ; Interuniversity Micro-Electronics Center -IMEC-, Louvain:
Ultra clean processing of semiconductor surfaces X : Selected, peer reviewed papers from the 10th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS), September 20 - 22, 2010, Ostend, Belgium
Durnten-Zurich: TTP, 2012 (Solid state phenomena 187)
ISBN: 978-3-03-785388-7
ISSN: 1012-0394
International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS) <10, 2010, Ostende>
Conference Paper
Fraunhofer ISE ()

Emitter formation of crystalline silicon solar cells by inline diffusion can be affected by non-uniformities in dopant deposition prior to the furnace due to insufficient wetting of hydropho-bic surfaces. The impact of dissolved ozone treatment after texturing has been investigated with respect to the possibility of improving the emitter formation with a low cost process enhancement. The chemically grown thin oxide improves wetting capability without modification of other surface characteristics that can impact cell efficiency. It could be shown that already low concentrations of ozone in UPW prior to phosphorus doping improve the sheet resistance uniformity on Cz-Si and multi-crystalline Si solar cells between 30 and 100 % compared to HF last treated ones.