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Comparative study of electrical and microstructural properties of 4H-SiC MOSFETs

: Strenger, C.; Häublein, V.; Erlbacher, T.; Bauer, A.J.; Ryssel, H.; Beltran, A.M.; Schamm-Chardon, S.; Mortet, V.; Bedel-Pereira, E.; Lefebvre, M.; Cristiano, F.


Devaty, R.P.; Dudley, M.; Chow, T.P.; Neudeck, P.G.:
Silicon carbide and related materials 2011 : Selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011, (ICSCRM 2011), September 11 - 16, 2011, Cleveland, Ohio, USA
Stafa-Zurich: Trans Tech Publications, 2012 (Materials Science Forum 717-720)
ISSN: 0255-5476
ISBN: 978-3-03-785419-8
pp.437-440 (Vol.1)
International Conference on Silicon Carbide and Related Materials (ICSCRM) <14, 2011, Cleveland/Ohio>
Conference Paper
Fraunhofer IISB ()

N-channel MOSFETs were manufactured on p-type and on p-implanted, n-type 4H-SiC substrates. The electron mobility in the inversion channel was measured to be correlated with the structural and chemical properties determined by transmission electron microscopy. With regard to what was previously discussed in the literature, interfacial layer formation and carbon distribution across the SiC/SiO 2 interface were considered in relation with the measured Hall electron mobility.