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Thermo-mechanical characterization and modeling of TSV annealing behavior

 
: Saettler, P.; Kovalenko, D.; Meier, K.; Roellig, M.; Boettcher, M.; Wolter, K.J.

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Institute of Electrical and Electronics Engineers -IEEE-:
13th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2012 : 16 - 18 April 2012, Cascais, Portugal
Piscataway: IEEE, 2012
ISBN: 978-1-4673-1512-8
ISBN: 978-1-4673-1513-5
pp.302-307
International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) <13, 2012, Cascais>
English
Conference Paper
Fraunhofer IZFP, Institutsteil Dresden ( IKTS-MD) ()

Abstract
This paper focuses on the characterization and Finite Element (FE) simulation of thermo-mechanical loads in Through Silicon Vias (TSVs), which emerge due to the annealing process after electro chemical deposition (ECD) of copper. For this purpose a FE-model has been implemented, which calculates the stress state of TSV structures after annealing. To validate the model, measurements using -Raman spectroscopy (RS) were carried out. Results from Finite Element Modeling (FEM) were converted into their corresponding Raman-Shifts to make it comparable to RS measurements. Additionally warpage and copper protrusion were measured to receive a complete picture of the occurring mechanisms and boundary conditions.

: http://publica.fraunhofer.de/documents/N-206455.html