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4H-SiC MOSFETs with a stable protective coating for harsh environment applications

 
: Daves, W.; Krauss, A.; Häublein, V.; Bauer, A.J.; Frey, L.

:

Devaty, R.P.; Dudley, M.; Chow, T.P.; Neudeck, P.G.:
Silicon carbide and related materials 2011 : Selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011, (ICSCRM 2011), September 11 - 16, 2011, Cleveland, Ohio, USA
Stafa-Zurich: Trans Tech Publications, 2012 (Materials Science Forum 717-720)
ISSN: 0255-5476
ISBN: 978-3-03-785419-8
pp.1089-1092 (Vol.2)
International Conference on Silicon Carbide and Related Materials (ICSCRM) <14, 2011, Cleveland/Ohio>
English
Conference Paper
Fraunhofer IISB ()

Abstract
In this work we present 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) with a stable protective coating for harsh environment applications. Both inversion channel (IC) and buried channel (BC) MOSFETs were realized on n-4H-SiC substrates with a p-epilayer. Stacked ONO gate dielectric and Ti/TiN/Pt/Ti interconnect were used. Ni and Ti ohmic contacts in combination with a-SiO x/a-SiN y and a-SiO x/a-SiC protective coatings were compared. The MOSFETs showed excellent transistor characteristics up to 600 °C and exceptional stability during long-term aging at 600 °C in air and during accelerated aging at 700 °C including temperature cycling and air/moisture environment.

: http://publica.fraunhofer.de/documents/N-206447.html