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High performance identical layer InGaAlAs-MQW 1300nm electroabsorption- modulated DFB-lasers for 4x25Gbit/s

: Klein, H.; Bornholdt, C.; Przyrembel, G.; Sigmund, A.; Molzow, W.-D.; Moehrle, M.


Panajotov, K.; Sciamanna, M.; Valle, A.; Michalzik, R. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Semiconductor Lasers and Laser Dynamics V : 16 April 2012, Brussels, Belgium
Bellingham, WA: SPIE, 2012 (Proceedings of SPIE 8432)
ISBN: 978-0-8194-9124-4
Paper 84321F
Conference "Semiconductor Lasers and Laser Dynamics" <5, 2012, Brussels>
Conference Paper
Fraunhofer HHI ()

We have developed electroabsorption modulated ridge waveguide-based DFB Lasers for 4x25Gbit/s that comply with the IEEE 100GBASE-ER4 Standard for 100Gbit-Ethernet. An identical InGaAlAs MQW layer stack is used in the DFB and the EAM section. Devices from a single wafer show excellent 25Gbit/s modulation performance at all four wavelengths with dynamic extinction ratios exceeding 9dB. All devices have facet output powers over +2.5dBm and are operated semi-cooled at 45°C.