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Is GaN the ideal material for space?

: Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Cäsar, M.; Müller, S.; Reiner, R.; Brueckner, P.; Kiefer, R.; Raay, F. van; Kühn, J.; Musser, M.; Haupt, C.; Mikulla, M.; Ambacher, O.

Microwave Technology and Techniques Workshop 2012 : 21-23 May 2012
Noordwijk: ESA Publications Division, 2012
7 pp.
Microwave Technology and Techniques Workshop <2012, Noordwijk/Netherlands>
Conference Paper
Fraunhofer IAF ()

We report on recent results from our GaN transistor and circuit technology. Epitaxial growth is performed on both SiC and Si substrates in order to provide high-quality AlGaN/GaN heterostructures. These heterostructures are then utilized in order to realize transistors and integrated circuits ranging from high-voltage transistors for voltage conversion in efficient power switches, L/S-band apower bars and X-band MMICs for next generation communication systems, and finally W-band MMICs for radar applications. The technology is characterized by state-of-the-art performance, good uniformity and high yield as well as excellent long-term stability. In combination with the space compatibility we believe that this technology is ideal for space. X-band MMICs from Fraunhofer IAF are scheduled to have the first in-orbit demonstration of European GaN within the Proba-V mission which is planned to be launched towards the end of 2012.