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Unequal pumping of quantum wells in GaN-based laser diodes

 
: Scheibenzuber, W.G.; Schwarz, U.T.

:

Applied physics express 5 (2012), No.4, Art. 042103, 2 pp.
ISSN: 1882-0778
ISSN: 1882-0786
English
Journal Article
Fraunhofer IAF ()

Abstract
We use rate equation simulations to model the influence of an unequal distribution of injected charge carriers in the quantum wells of GaN-based laser diodes. Therefore, the basic rate equation model is generalized to include multiple independent charge carrier reservoirs that couple to the optical cavity mode. The occurrence of a nonlinear output characteristic is found to be a direct evidence of unequal pumping, and the pumping ratio of the quantum wells can be determined from the magnitude of this nonlinearity.

: http://publica.fraunhofer.de/documents/N-205469.html