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Plasma affected 2DEG properties on GaN/AlGaN/GaN HEMTs

: Linkohr, S.; Pletschen, W.; Kirste, L.; Himmerlich, M.; Lorenz, P.; Krischok, S.; Polyakov, V.M.; Müller, S.; Ambacher, O.; Cimalla, V.


Physica status solidi. C 9 (2012), No.3-4, pp.938-941
ISSN: 1610-1634
ISSN: 1610-1642
ISSN: 1862-6351
International Conference on Nitride Semiconductors (ICNS) <9, 2011, Glasgow>
Journal Article
Fraunhofer IAF ()
plasma treatment; AlGaN/GaN HEMT; 2DEG properties; fluorine

We investigated the impact of SF6 plasma treatments on the electronic transport properties of GaN/AlGaN/GaN heterostructures by employing different plasma conditions as well as annealing in nitrogen atmosphere at 425°C. The electrical properties are characterized by Hall-effect measurements while electron spectroscopy and X-ray measurements are used to investigate changes in the surface chemical composition and in the layer structure, respectively. It is demonstrated that plasma treatments strongly affect the 2DEG properties of the heterostructure due to altering of the surface potential accompanied by the formation of a thin fluorinated amorphous film. Increasing the DC bias voltage for the plasma treatment leads to an additional degradation of the mobility caused by incorporation of fluorine into the heterostructure interface. Furthermore, the thin GaN cap layer is etched by plasma treatments with higher bias potential, which increases the carrier density at the interface.