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Interactions of dislocations during epitaxial growth of SiC and GaN

 
: Friedrich, J.; Kallinger, B.; Berwian, P.; Meissner, E.

:

Capper, P. (Hrsg.); Rudolph, P. (Hrsg.):
Crystal growth technology. Semiconductors and dielectrics : selected reviews from the "Fourth International Workshop on Crystal Growth Technology" organized in Beatenberg, Switzerland by Hans Scheel between 18 - 25 May 2008 ; IWCGT-4
Weinheim: Wiley-VCH, 2010
ISBN: 978-3-527-32593-1
pp.137-150
International Workshop on Crystal Growth Technology (IWCGT) <4, 2008, Beatenberg>
English
Conference Paper
Fraunhofer IISB ()

: http://publica.fraunhofer.de/documents/N-203528.html