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Ferroelectricity in hafnium oxide: CMOS compatible ferroelectric field effect transistors

: Boschke, T.S.; Müller, J.; Bräuhaus, D.; Schröder, U.; Böttger, U.


IEEE Electron Devices Society:
IEEE International Electron Devices Meeting, IEDM 2011 : Washington, DC, USA, 5 - 7 December 2011
Piscataway/NJ: IEEE, 2011
ISBN: 978-1-4577-0506-9
ISBN: 978-1-4577-0505-2
International Electron Devices Meeting (IEDM) <2011, Washington/DC>
Conference Paper
Fraunhofer CNT ()

We report the discovery of ferroelectricity in crystalline hafnium silicon oxide. If HfO2 based thin films, at a composition where the tetragonal phase is not yet stable, are crystallized in presence of a cap, the formation of an orthorhombic phase is observed. o-HfO2 shows a piezoelectric response, while a polarization measurements exhibit a remanent polarization above 10 µC/cm2 at a coercive field of 1 MV/cm, confirming this phase to be ferroelectric. Transistors fabricated with this material exhibit a permanent and switchable shift of the threshold voltage, allowing the realization of CMOS-compatible ferroelectric field effect transistors (FeFET) with sub 10 nm gate insulators for the first time.