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AlGaN/GaN HEMTs on SiC: Towards power operation at V-band

AlGaN/GaN HEMTs auf SiC: Perspektiven für Leistungsanwendungen im V-Band
: Quay, R.; Tessmann, A.; Kiefer, R.; Weber, R.; Raay, F. van; Kuri, M.; Riessle, M.; Massler, H.; Müller, S.; Schlechtweg, M.; Weimann, G.

International Electron Devices Meeting 2003
New York, NY: IEEE, 2003
ISBN: 0-7803-7872-5
International Electron Devices Meeting <49, 2003, Washington/DC>
Conference Paper
Fraunhofer IAF ()
HEMT; SiC; substrate; power amplifier; Leistungsverstärker; millimeter wave; transistor; Millimeterwellentransistor

The operation of AlGaN/GaN HEMTs on SiC substrate at V-band frequencies (50-75 GHz) is discussed. Both common source and dual-gate AlGaN/GaN HEMTs on SiC substrate are optimized and investigated by active and passive load-pull measurements. At 60 GHz, a power density of >= 0.5 W/mm can be measured for a small common source AlGaN/GaN HEMT limited so far by the available input power of the newly developed load-pull system. A common source HEMT with W9=0.18 mm yields a power density of 1.9 W/mm at 40 GHz and a linear power gain of >= 5 dB at 60 GHz, while several dual-gate AlGaN/GaN HEMTs of W9=0.18 mm and 0.36 mm yield MSG/MAG values >= 12 dB at 60 GHz.