Verfahren zur Messung der Lumineszenzstrahlung einer Halbleiterstruktur
Date Issued
2008
Author(s)
Giesecke, J.
Patent No
102008044883
Abstract
The method involves measuring reflection intensities for each location point of a measuring side (1a) by a camera (2) e.g. charge coupled device camera. An excitation radiation reflected on the side is not or only partly suppressed by a filter unit (3) e.g. short pass filter. A corrected value of a luminescent radiation intensity is determined. The corrected intensity value is determined such that the measured reflection intensities are extracted from a measured intensity of a part of a radiation irradiated from the side and are scaled with a preset location-independent factor.