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A less damaging patterning regime for a successful integration of ultra low-k materials in modern nanoelectronic devices
|Baklanov, M.R. ; Materials Research Society -MRS-:|
Materials, processes, and reliability for advanced interconnects for micro- and nanoelectronics 2011 : Symposium held April 25 - 29, 2011, San Francisco, California, U.S.A.; Symposium O "Materials, Processes, and Reliability for Advanced Interconnects for Micro- and Nanoelectronics", held at the 2011 MRS spring meeting
Cambridge: Cambridge University Press, 2012 (Materials Research Society Symposium Proceedings 1335)
|Symposium O "Materials, Processes, and Reliability for Advanced Interconnects for Micro- and Nanoelectronics" <2011, San Francisco/Calif.>|
Materials Research Society (Spring Meeting) <2011, San Francisco/Calif.>
| Conference Paper|
|Fraunhofer ENAS ()|
This paper describes a three-step process regime for the integration of porous SiCOH based ultra low-k materials in existing copper damascene technologies. During the work with these complex and sensitive materials, it became more and more clear, that a successful patterning depends not only on the etch step but also on the adjustment between the etch and the following cleaning and k-restore processes. The presented process regime starts with a reactive ion etch process for trench patterning followed by a post etch clean to remove etch residues. Finally a k-restore process was performed to repair the damaged regions in the trench sidewalls. In this work it became clear, that the etch chemistry influences not only the results of the etch process ostensibly sidewall damage but also kind and effect of the post etch clean. Each plasma composition results in the necessity of a customized post etch cleaning solution. Finally a k-restore process using Hexamethyldisilazane (HMDS) asrestore chemical was demonstrated successfully. Enhanced temperatures and an additional UV-treatment are possibilities to promote the restore effect.