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Screen-printed epitaxial silicon thin-film solar cells with 13.8% efficiency

: Rentsch, J.; Bau, S.; Huljic, D.M.


Progress in Photovoltaics 11 (2003), No.8, pp.527-534
ISSN: 1062-7995
Journal Article
Fraunhofer ISE ()
manufacturing; processing; expitaxy; thin-film crystalline silicon; chemical

Amidst the different silicon thin-film systems, the epitaxial thin-film solar cell represents an approach with interesting potential. Consisting of a thin active c-Si layer grown epitaxially on top of a low-quality c-Si substrate, it can be implemented into solar cell production lines without major changes in the current industrial process sequences. Within this work, 30-m-thick epitaxial layers on non-textured and highly doped monocrystalline Czochralski (Cz) and multicrys talline (mc) Si substrates have been prepared by CVD. Confirmed efficiencies of 138% on Cz and 123% on mc-Si substrates have been achieved by applying an industrial process scheme based on tube and in-line phosphorus diffusion, as well as screen-printed front and back contacts fired through a SiNx anti-reflection coating. An extensive solar cell characterisation, including infrared lock-in therm ography and spectral response measurements is presented.