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SiGe epitaxy on a 300 mm batch furnace

: Naumann, A.; Sundqvist, J.; Ogiewa, M.; Boitier, L.; Czernohorsky, M.; Sienz, S.; Probst, G.; Jongbloed, B.; Beulens, S.; Maes, J.W.; Thomas, S.


Journal of nanoscience and nanotechnology 11 (2011), No.9, pp.8040-8043
ISSN: 1533-4880
Journal Article
Fraunhofer CNT ()

This work reports the feasibility of silicon and silicon germanium epitaxy using an ASM A412(TMa) LPCVD all quartz, hot wall, vertical batch furnace reactor using 100 wafer product loads. The very same furnace can be used for 25 wafer and 200 wafer load size, without any hardware changes, dependant on production needs. Following this approach a significant cost reduction for epitaxy in 300 mm high volume manufacturing is possible and enables new applications. The native oxide of the substrate was removed by wet chemical cleaning with time coupling of less than 1 h and subsequent in-situ low pressure hydrogen anneal prior to Si or SiGe deposition. The epitaxial layers were grown using silane and germane. The Si and SiGe layers have been characterized with ToFSIMS, XRD, Raman, AFM and TEM confirming excellent crystalline quality, layer thickness and within wafer SiGe stoichiometry uniformity.