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Analysis and optimization approach for the doped amorphous layers of silicon heterojunction solar cells

 
: Pysch, D.; Meinhard, C.; Harder, N.-P.; Hermle, M.; Glunz, S.W.

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Fulltext urn:nbn:de:0011-n-1985147 (887 KByte PDF)
MD5 Fingerprint: a5caefdb26d2ba031cddfcdb4a777f5e
Created on: 20.12.2014


Journal of applied physics 110 (2011), No.9, Art. 094516, 8 pp.
ISSN: 0021-8979
ISSN: 1089-7550
English
Journal Article, Electronic Publication
Fraunhofer ISE ()
Solarzellen - Entwicklung und Charakterisierung; Silicium-Photovoltaik; Oberflächen - Konditionierung; Passivierung; Lichteinfang; Herstellung und Analyse von hocheffizienten Solarzellen; Industrielle und neuartige Solarzellenstrukturen; Charakterisierung; Qualitätssicherung und Messtechnikentwicklung - Material; Zellen und Module

Abstract
Comparison of the open-circuit voltage (external voltage V(oc,ext)) determined by Suns-V(oc) measurements with the implied voltage V(oc, impl) determined by transient photoconductance decay lifetime measurements can yield a quick and easy analysis of silicon heterojunction (SHJ) solar cells, especially in regard to finding the optimum doping concentration of the emitter layer [or back surface field (BSF)]. A sufficiently high doping concentration of the emitter and BSF is mandatory to extract the internal Fermi-level splitting and thus the internal voltage, at the solar cell contacts. However increasing the concentration of doping gases during the deposition of doped amorphous silicon layers results in a reduction of the interface passivation quality and Voc, impl. The best trade off is realized when the ratio of V(oc,ext) to V(oc,impl) (external/internal V(oc)-ratio zeta) reaches a saturation value near 1 upon increasing the doping concentration. AFORS-HET (Automat FOR Simulation of HETerostructures) simulations resulted in the conclusion that the characteristics of the external/internal Voc-ratio are mainly determined by the active doping concentration (doping minus defect concentration).

: http://publica.fraunhofer.de/documents/N-198514.html