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GaSb-based high-power and high-brightness semiconductor lasers emitting at >= 2 µm
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2010
Conference Paper
Title
GaSb-based high-power and high-brightness semiconductor lasers emitting at >= 2 µm
Author(s)
Wagner, J.
Kelemen, M.T.
Mainwork
23rd Annual Meeting of the IEEE Photonics Society 2010
Conference
IEEE Photonics Society (Annual Meeting) 2010
DOI
10.1109/PHOTONICS.2010.5698755
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
