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High Power High bandwidth GaN MMICs and hybrid amplifiers: Design and characterization

: Raay, F. van; Quay, R.; Kiefer, R.; Walcher, H.; Kappeler, O.; Seelmann-Eggebert, M.; Muller, S.; Schlechtweg, M.; Weimann, G.

Gallium Arsenide Application Symposium Association -GAAS-:
13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium. Conference proceedings : Monday 3rd & Tuesday 4th October 2005, Paris, France. Part of European Microwave Week
London: Horizon House Publications, 2005
ISBN: 88-902012-0-7
European Gallium Arsenide and Other Compound Semiconductors Application Symposium (GAAS) <13, 2005, Paris>
Conference Paper
Fraunhofer IAF ()

Broadband microstrip and coplanar MMIC amplifiers featuring beyond 10W for X-band radar applications are realized in a AlGaN/GaN HEMT technology on 2" s.i. SiC substrate. Single-stage and dual-stage demonstrators with flat gain from 1 GHz to 2.7 GHz and up to 40 W peak power in hybrid microstrip technology for basestation applications are presented. The performance illustrates the potential of this technology with very high bandwidth and superior power density in comparison to GaAs.