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Development of a 2"-AlGaN/GaN HEMT technology on sapphire and SiC for mm-wave high-voltage power applications

Entwicklung einer 2"-AlGaN/GaN HEMT Technologie auf Saphir- und SiC Substraten für mm-Wellen Hochspannungs- und Hochleistungsanwendungen
 
: Kiefer, R.; Quay, R.; Müller, S.; Feltgen, T.; Raynor, B.; Schleife, J.; Köhler, K.; Massler, H.; Ramberger, S.; Raay, F. van; Tessmann, A.; Mikulla, M.; Weimann, G.

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Physica status solidi. A 200 (2003), No.1, pp.191-194
ISSN: 0031-8965
ISSN: 1862-6300
ISSN: 1521-396X
ISSN: 1862-6319
English
Journal Article
Fraunhofer IAF ()
GaN; SiC; millimeter wave; Millimeterwelle; MMIC; MODFET; Mikrowellen-Leistungsverstärker; microwave power amplifier

Abstract
The suitability of AlGaN/GaN HEMTs on SiC is discussed with respect to mm-wave applications at 40 GHz and beyond. A 0.15 µm T-gate AlGaN/GaN-HEMT 2-inch technology on SiC and sapphire was developed for high power applications and for frequencies beyond 30 GHz. Large periphery devices with 0.48 mm gate width show a cw output power of 0.86 W at 40 GHz. AlGaN/GaN dual-gate HEMTs show MSG/MAG of >13 dB at 60 GHz with 0.15 µm gate length.

: http://publica.fraunhofer.de/documents/N-19794.html