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Identification of a Br-correlated bandgap state in GaAs by radiotracer spectroscopy

: Albrecht, F.; Pasold, G.; Grillenberger, J.; Achtziger, N.; Witthuhn, W.; Risse, M.; Vianden, R.; Dietrich, M.


Applied Physics Letters 83 (2003), No.21, pp.4333-4335
ISSN: 0003-6951
ISSN: 1077-3118
Journal Article
Fraunhofer INT ()
Fraunhofer IIS ()
gallium arsenide; bromine; impurity states; deep levels; deep level transient spectroscopy; energy gap; III-V semiconductor

A deep energy level of bromine in the bandgap of GaAs was determined by means of Radiotracer deep-level transient spectroscopy (DLTS) measurements. For this purpose, the radioactive isotope Br-77 was implanted in p-type as well as in n-type GaAs. In the course of repeated DLTS measurements at n-type GaAs, the spectra are dominated by the occurrence of one bandgap state with the trap parameters E-t=E-C-0.45(2) eV and sigma=2x10(-14) cm(2). This level vanishes on time scales of the nuclear half-life of the elemental transmutation from Br-77 to Se-77 (T-1/2=57 h). Thereby, a definite correlation can be drawn between the observed bandgap state and a Br-correlated defect.