Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Investigations of single event effects with heavy ions of energies up to 1.5 GeV/n

: Höffgen, Stefan Klaus; Durante, Marco; Ferlet-Cavrois, Veronique; Harboe-Sorensen, Reno; Lennartz, Wilhelm; Kündgen, Tobias; Kuhnhenn, Jochen; LaTessa, Chiara; Mathes, Markus; Menicucci, Alessandra; Metzger, Stefan; Nieminen, Petteri; Pleskac, Radek; Poivey, Christian; Schardt, Dieter; Weinand, Udo

Preprint urn:nbn:de:0011-n-1958788 (60 KByte PDF)
MD5 Fingerprint: 743070cf7c8be017f6e0992608e8d210
© 2011 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Created on: 7.3.2012

Institute of Electrical and Electronics Engineers -IEEE-; European Space Agency -ESA-, Paris; Instituto Nacional de Tecnica Aeroespacial -INTA-:
12th European Conference on Radiation and its Effects on Components and Systems, RADECS 2011. Proceedings : Sevilla, Spain, 19 - 23 September 2011
Piscataway/NJ: IEEE, 2011
ISBN: 978-1-4577-0585-4
ISBN: 1-4577-0585-0
ISBN: 978-1-4577-0587-8
European Conference on Radiation and its Effects on Components and Systems (RADECS) <12, 2011, Sevilla>
Conference Paper, Electronic Publication
Fraunhofer INT ()
single event effects; heavy ions; nuclear reaction; indirect ionization; energy effects

The ESA SEU-Monitor, a DDR2 SDRAM and a power MOSFET have been irradiated at GSI with ions of energies from 80 to 1500 MeV/n. The results are compared to low energy (< 50 MeV/n) data.