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2011
Conference Paper
Titel
Investigations of single event effects with heavy ions of energies up to 1.5 GeV/n
Abstract
The ESA SEU-Monitor, a DDR2 SDRAM and a power MOSFET have been irradiated at GSI with ions of energies from 80 to 1500 MeV/n. The results are compared to low energy (< 50 MeV/n) data.
Author(s)