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Quenching of transient photoluminescence by strong in-plane electric fields in quantum wells

Unterdrückung von Photolumineszenz-Transienten in Quantenfilmen durch starke elektrische Felder parallel zu den Quantenfilmen
: Kundrotas, J.; Dargys, A.; Asmontas, S.; Valusis, G.; Köhler, K.

Krumins, A. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Advanced organic and inorganic optical materials : 19 - 22 August 2002, Riga, Latvia ; International Conference on Advanced Optical Materials and Devices (AOMD)
Bellingham/Wash.: SPIE, 2003 (SPIE Proceedings Series 5122)
ISBN: 0-8194-4982-2
International Conference on Advanced Optical Materials and Devices (AOMD) <3, 2002, Riga>
Conference Paper
Fraunhofer IAF ()
III-V semiconductor; III-V Halbleiter; superlattice; Übergitter; time resolved; zeitaufgelöst; optical property; optische Eigenschaften

Investigations of transient photoluminescence induced by external electric fields parallel to the layers of GaAs/Al0.35Ga0.65As quantum wells are reviewed. The photoluminescence was detected by time-correlated single-photon counting technique at liquid nitrogen and liquid helium temperatures applying electric fields of nanosecond duration to the wells of different width. It is shown how experimentally one can resolve between excitonic and donor impact ionization processes in combining spectral and time domains. From the study of the spectral-temporal dynamics at initial moments we have determined the coefficient of exciton impact ionization as a function of electric field for various widths of the quantum wells.