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Predictive modeling of EUV-lithography: The role of mask, optics, and photoresist effects

: Erdmann, A.; Evanschitzky, P.; Shao, F.; Fühner, T.; Lorusso, G.; Hendrickx, E.; Goethals, A.M.; Jonckheere, R.; Bret, T.; Hofmann, T.


Smith, D.G. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Physical optics : 5 - 6 September 2011, Marseille, France; Proceedings of the Physical Optics Conference at the Optical Systems Design Symposium
Bellingham, WA: SPIE, 2011 (Proceedings of SPIE 8171)
ISBN: 978-0-8194-8797-1
Paper 81710M
Physical Optics Conference <2011, Marseille>
Optical Systems Design Symposium <2011, Marseille>
Conference Paper
Fraunhofer IISB ()
EUV lithography; lithography simulation; computational lithography; resist model calibration; multilayer defect

Extreme ultraviolet (EUV) - lithography at a wavelength around 13.5 nm is considered as the most promising successor of optical projection lithography. This paper reviews simulation models for EUV lithography. Resist model parameters are calibrated with experimental data. The models are applied for the investigation of the impact of mask multilayer defects on the lithographic process.