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AlGaN/GaN HEMTs on silicon carbide substrates for microwave power operation

AlGaN/GaN HEMTs auf SiC-Substraten für Leistungsanwendungen im Mikrowellenbereich
: Lossy, R.; Chaturvedi, N.; Heymann, P.; Köhler, K.; Müller, S.; Würfl, J.

GaAs Mantech 2003. Proceedings
Scottsdale, Ariz., 2003
ISBN: 1-893580-04-0
International Conference on Compound Semiconductor MANufacturing TECHnology (GaAs MANTECH) <18, 2003, Scottsdale/Ariz.>
Conference Paper
Fraunhofer IAF ()
III-V Halbleiter; III-V semiconductor; heterostructure; Heterostruktur; electron; device; elektrisch; Bauelement

Results from technology and microwave characterization of large periphery AlGaN/GaN power HEMTs on insulating SiC substrates are presented. The influence of processing steps on device performance is discussed. DC characteristics reveal current densities above 1.2 A/mm and extrinsic transconductances of 275 mS/mm. A power density of 5.2 W/mm @ 2 GHz is obtained for devices up to 2 mm gate width. The maximum power level achieved on-wafer is 13.8 W @ 2 GHz for 4 mm wide devices. A hybrid amplifier using packaged 4 mm devices delivers 15.1 W.