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Large signal modeling of AlGaN/GaN HEMTs with Psat > 4 W/mm at 30 GHz suitable for broadband power applications

Großsignal-Modellierung von AlGaN/GaN HEMTs mit Psat > 4 W/mm bei 30 GHz, geeignet für breitbandige Leistungsanwendungen
: Raay, F. van; Quay, R.; Kiefer, R.; Schlechtweg, M.; Weimann, G.


Thal, H. ; IEEE Microwave Theory and Techniques Society:
IEEE MTT-S International Microwave Symposium digest 2003. Vol.1 : June 8 - 13, 2003, Pennsylvania Convention Center, Philadelphia, Pennsylvania
Piscataway, NJ: IEEE, 2003
ISBN: 0-7803-7695-1
ISBN: 0-7803-7696-X
International Microwave Symposium (IMS) <2003, Philadelphia/Pa.>
Conference Paper
Fraunhofer IAF ()
device modeling; Bauelement-Modellierung; AlGaN/GaN HEMTs; load-pull; measurement; Messung; parameter extraction; Modell-Parameterextraktion; model; Modell; verification; Verifikation

Large signal modeling and investigations of an AlGaN/GaN HEMT process on SiC with lg = 150 nm are performed with respect to broadband amplifiers up to 30 GHz. Output power values of 3.4 W or 4.25 W/mm at 18 GHz and Pout=1.6 W equivalent to 4 W/mm at 30 GHz are measured. The device modeling shows good agreement of the measured and modeled power sweeps at 10 GHz and 30 GHz. The large signal simulations show the suitability of AlGaN/GaN HEMTs for multi-band amplifiers in the K-band.