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2003
Conference Paper
Titel
Optical evaluation of spatial carrier concentration fluctuations in doped InP substrates
Alternative
Optische Bestimmung der räumlichen Ladungsträgerverteilung in dotierten InP Substraten
Abstract
Nondestructive electrical characterization of LEC and VGF grown InP:S substrates is achieved with innovative photoluminescence line shift topography. The optical data, satisfactorily in agreement with band-gap renormalization and band filling theory, are absolutely calibrated against Hall effect measurements in the range 2.10(exp17) cm3 up to 2.10(exp19) cm-3. The 70 µm lateral resolution and 1 % sensitivity of the fall wafer carrier concentration imaging allow to discern characteristic variations, such as doping striations.
Author(s)
Language
English