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Optical evaluation of spatial carrier concentration fluctuations in doped InP substrates

Optische Bestimmung der räumlichen Ladungsträgerverteilung in dotierten InP Substraten
: Baeumler, M.; Diwo, E.; Jantz, W.; Sahr, U.; Müller, G.; Grant, I.

Ilegems, M.; Weimann, G.; Wagner, J.:
Compound Semiconductors 2002, ISCS : Proceedings of the 29th International Symposium on Compound Semiconductors
Bristol: IOP Publishing, 2003 (IOP Conference Series 174)
ISBN: 0-7503-0942-3
International Symposium on Compound Semiconductors (ISCS) <29, 2002, Lausanne>
Conference Paper
Fraunhofer IAF ()
Fraunhofer IISB ()
photoluminescence topography; Photolumineszenz-Topographie; doping; Dotierung; InP substrate; carrier concentration; Ladungsträgerkonzentration

Nondestructive electrical characterization of LEC and VGF grown InP:S substrates is achieved with innovative photoluminescence line shift topography. The optical data, satisfactorily in agreement with band-gap renormalization and band filling theory, are absolutely calibrated against Hall effect measurements in the range 2.10(exp17) cm3 up to 2.10(exp19) cm-3. The 70 µm lateral resolution and 1 % sensitivity of the fall wafer carrier concentration imaging allow to discern characteristic variations, such as doping striations.