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Evaluation on AIN material properties through vibration analysis of thin membranes

: Lebedev, V.; Knöbber, F.; Heidrich, N.; Sah, R.E.; Pletschen, W.; Cimalla, V.; Ambacher, O.

Physica status solidi. C 9 (2012), No.2, pp.403-406
ISSN: 1610-1634
ISSN: 1610-1642
ISSN: 1862-6351
International Symposium on Compound Semiconductors (ISCS) <38, 2011, Berlin>
Journal Article, Conference Paper
Fraunhofer IAF ()
AIN; material property; stress; vibrometry

In this work, the mechanical properties of thin piezoelectric AlN films along with the methods and instruments to obtain this information with sufficient accuracy via dynamic (vibration) and static analyses of thin membranes are reported. In addition, the impact of different damping mechanisms on the amplitude of forced oscillations have been considered in order to obtain the analytical expression relating the resonant amplitude of membrane to the ambient gas pressure. Surface topology of a 220 nm thick AlN membrane measured in the dynamic (1,3) and static deflection modes by laser vibrometry and white light interferometry, respectively.