Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

TCAD challenges and some Fraunhofer solutions

 
: Lorenz, J.

:

Institute of Electrical and Electronics Engineers -IEEE-; IEEE Electron Devices Society:
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011 : 8-10 September 2011, Osaka, Japan
New York, NY: IEEE, 2011
ISBN: 978-1-61284-419-0
ISBN: 978-1-61284-416-9
pp.1-4
International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) <2011, Osaka>
English
Conference Paper
Fraunhofer IISB ()
ITRS; lithography; topography; dopant diffusion and activation; device architecture; process variations and windows

Abstract
In order to meet its industrial target to reduce the development time and costs for new semiconductor technologies, devices and circuits, TCAD must meet various challenges which are outlined in the ITRS. After a short outline of these challenges, related results obtained at Fraunhofer for the simulation of lithography and other topography steps, dopant diffusion/activation, device architectures and impact of process variations are summarized.

: http://publica.fraunhofer.de/documents/N-192494.html